Asia-Pacific Microwave Conference · 2010 · 26 citations · 10 references
Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorPower DeviceEnergy EfficiencySolar PowerExternal Matching ComponentAluminum Gallium NitrideGan Power DevicePower ElectronicsSsps SatellitesPhotovoltaicsInternal Matching Circuit
In this paper, an internally-matched GaN HEMT high efficiency amplifier for Space Solar Power Stations/System (SSPS) is presented. The internal matching circuit was designed so that 2nd and 3rd harmonics are tuned to obtain maximum power added efficiency (PAE). PAE of 70% was successfully obtained with 7W output power at 5.8GHz. All matching circuit is in a hermetically sealed package and no external matching component is necessary. It will enable to shrink volume and mass of modules loaded onto SSPS satellites.
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