High-Detectivity and High-Single-Photon-Detection-Efficiency 4H-SiC Avalanche Photodiodes

Abstract

We report large-area, 250-mum-diameter, 4H-SiC avalanche photodiodes with low dark current and high gain. At room temperature, the dark current density is 59.5 nA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at a gain of 1000. An external quantum efficiency of 48% at 280 nm is achieved at unity gain with a recessed-window structure. The differential resistance of the recessed-window device at zero bias is estimated to be 6times10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">14</sup> Omega. As a result of high external quantum efficiency, large area, and large differential resistance, a record high specific detectivity of 4.1times10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">14</sup> cmHz <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1/2</sup> W <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> , has been achieved. In Geiger mode operation, high single photon detection efficiency of 30% with dark count probability of 8times10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-4</sup> is reported.