Evaluation and Application of 600 V GaN HEMT in Cascode Structure

Abstract

Gallium nitride high electron mobility transistor (GaN HEMT) has matured dramatically over the last few years. A progressively larger number of GaN devices have been manufactured for in field applications ranging from low power voltage regulators to high power infrastructure base-stations. Compared to the state-of-the-art silicon MOSFET, GaN HEMT has a much better figure of merit and shows potential for high-frequency applications. The first generation of 600 V GaN HEMT is intrinsically normally on device. To easily apply normally on GaN HEMT in circuit design, a low-voltage silicon MOSFET is in series to drive the GaN HEMT, which is well known as cascode structure. This paper studies the characteristics and operation principles of a 600 V cascode GaN HEMT. Evaluations of the cascode GaN HEMT performance based on buck converter at hard-switching and soft-switching conditions are presented in detail. Experimental results prove that the cascode GaN HEMT is superior to the silicon MOSFET, but it still needs soft-switching in high-frequency operation due to considerable package and layout parasitic inductors and capacitors. The cascode GaN HEMT is then applied to a 1 MHz 300 W 400 V/12 V LLC converter. A comparison of experimental results with a state-of-the-art silicon MOSFET is provided to validate the advantages of the GaN HEMT.