Picosecond optoelectronic measurement of the high-frequency scattering parameters of a GaAs FET

Abstract

To investigate the application of picosecond optoelectronics to device diagnostics, we use these techniques to characterize a high frequency GaAs field effect transistor (FET). The picosecond transient response of the device is transformed to the frequency domain to extract scattering parameters with >60 GHz bandwidth. The large bandwidth available and simple de-embedding procedures make this a very promising technique for characterization of devices operating in the millimeter-wave region.