Deposition of nitrogen doped tetrahedral amorphouscarbon (ta-C:N) films by ionbeam assisted filtered cathodic vacuum arc

Abstract

An alternative approach to deposit ta-C:N films by ion assisted filtered cathodic vacuum arc (IAFCVA) is presented and compared with ta-C films prepared by FCVA under nitrogen partial pressure. The electronic properties are strongly dependent on nitrogen partial pressure for both methods although the efficiency of doping is higher for IAFCVA