Distribution of Residual Stresses in Boron Doped p+ Silicon Films

Abstract

Based on a cross‐sectional transmission electron microscopy study of dislocation configurations in boron doped p+ silicon layer, the distribution of residual stresses in the boron diffused silicon layer as well as in the p+ silicon films that were made from this layer are formulated. The calculated deflections of the p+ cantilever beams that underwent different processes match well with the experimental data. The calculation of the distribution of the residual stresses in the p+ silicon films demonstrates that by adjusting the boron concentration profile using a proper postdiffusion process, the stress pattern can be controlled and, hence, the film buckling can be eliminated.