3–3.6-GHz Wideband GaN Doherty Power Amplifier Exploiting Output Compensation Stages

Jorge Julián Moreno Rubio, Jie Fang, Vittorio Camarchia, Roberto Quaglia, Marco Pirola, Giovanni Ghione

IEEE Transactions on Microwave Theory and Techniques · 2012 · 159 citations · 18 references

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TL;DR

The authors design, realize, and experimentally characterize a GaN‑based hybrid Doherty power amplifier for wideband operation in the 3–3.6 GHz band. The amplifier employs a novel, simple wideband compensator network and exploits second‑harmonic tuning at the upper band limit to improve gain equalization. The packaged GaN HEMT amplifier achieves >38 % drain efficiency at 6 dB back‑off, ~10 dB gain, 43–44 dBm maximum power, 55–66 % saturated efficiency, and a constant 20 W output, matching state‑of‑the‑art performance at higher frequency with a simpler design.

Abstract

We discuss the design, realization and experimental characterization of a GaN-based hybrid Doherty power amplifier for wideband operation in the 3-3.6-GHz frequency range. The design adopts a novel, simple approach based on wideband compensator networks. Second-harmonic tuning is exploited for the main amplifier at the upper limit of the frequency band, thus improving gain equalization over the amplifier bandwidth. The realized amplifier is based on a packaged GaN HEMT and shows, at 6 dB of output power back-off, a drain efficiency higher than 38% in the 3-3.6-GHz band, gain around 10 dB, and maximum power between 43 and 44 dBm, with saturated efficiency between 55% and 66%. With respect to the state of the art, we obtain, at a higher frequency, a wideband amplifier with similar performances in terms of bandwidth, output power, and efficiency, through a simpler approach. Moreover, the measured constant maximum output power of 20 W suggests that the power utilization factor of the 10-W (Class A) GaN HEMT is excellent over the amplifier band.

References

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