Gain and stability models for HBT grid amplifiers

Abstract

A 16-element heterojunction bipolar transistor (HBT) grid amplifier has been fabricated with a peak gain of 11 dB at 9.9 GHz with a 3-dB bandwidth of 350 MHz. We report a gain analysis model for the grid and give a comparison of the measurement and theory. The measured patterns show the evidence of a common-mode oscillation. A stability model for the common-mode oscillation is developed. Based on the stability model, a lumped capacitor gives suitable phase shift of the circular function, thus stabilizing the grid. A second 18-element grid was fabricated, using this theory, with improved stability.