EngineeringElectrical EngineeringMaterials EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsField-effect TransistorsIii-v SemiconductorsSemiconductor Device MaterialsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBreakdown VoltageGallium Nitride (Gan) MaterialsHigh-voltage BreakdownJunction BreakdownSchottky Barrier ContactsSchottky Barrier DiodesSchottky BarriersVoltage
We first demonstrated a new structure of GaN Schottky diode, with dual Schottky structures. That is, a field effect Schottky barrier diode (FESBD) was fabricated. The purpose of this diode was to lower the on-state voltage and to maintain a high reverse breakdown voltage. This diode was fabricated using an AlGaN/GaN heterojunction and a selective area growth (SAG) technique. We obtained an on-state voltage below 0.1 V, using a vertical type FESBD and the breakdown voltage was over 400 V using a planar type FESBD.
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Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage
A. P. Zhang, J. W. Johnson, F. Ren et al. · Applied Physics Letters · 2001 · 93 citations