Understanding the Origin of the Low Performance of Chemically Grown Silicon Nanowires for Solar Energy Conversion

Abstract

Wired: Electrochemical impedance spectroscopy (ESI) reveals that high energy-conversion efficiencies are attainable on vertically aligned Si nanowires obtained by electroless etching (see picture). The key reason for the low performance of chemically grown Si nanowires lies in the mid-gap traps as a result of growth chemistry. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.