Influence of intrinsic defects on the electrical properties of A^IB^IIIC compounds

Abstract

Abstract The electrical parameters of undoped melt grown A I B III C VI 2 crystals are compared with predictions which can made considering the deviations from stoichiometry due to the incongruent evaporation of these compounds. It is shown that the electrical properties of all A I B III C compounds can be interpreted in a consistent manner if the electrical activity (donor or acceptor) of the intrinsic defects is considered in the covalent bonding model.