Inverse Problems for Metal Oxide Semiconductor Field-Effect Transistor Contact Resistivity

Abstract

Inverse problems arising from the identification of transistor contact resistivity and contact window location are studied. A one-point boundary measurement of the potential is shown to be sufficient to identify each from a one-parameter monotone family, and such identification is both stable and continuously dependent on the parameter. For a nonmonotone family of locations with resistivity given, similar results are obtained for measurement made on almost all boundary points.