Publication | Closed Access
Power MOSFETs, IGBTs, and thyristors in SiC: Optimization, experimental results, and theoretical performance
17
Citations
6
References
2009
Year
Unknown Venue
Experimental ResultsElectrical EngineeringConsistent MethodologyEngineeringBipolar Power DevicesPower DevicePower DevicesPower CircuitBias Temperature InstabilitySemiconductor DevicePower Semiconductor DeviceTheoretical PerformancePower InverterPower ElectronicsPower MosfetsMicroelectronicsSic Mosfets
In this paper we present recent experimental results on SiC MOSFETs, IGBTs, and thyristors, and propose a consistent methodology for comparing unipolar and bipolar power devices as a function of blocking voltage and switching frequency.
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