2009 · 17 citations · 6 references
EngineeringElectrical EngineeringMicroelectronicsPower ElectronicsSemiconductor DevicesConverter TopologiesDevice CharacterizationDevice ModelingSemiconductor Device MaterialsShort-channel EffectsWide Band Gap SemiconductorsExperimental Results InterpretationPower Converter DesignPower Electronics DevicesPower MosfetsSilicon Carbide (Sic) MaterialsSilicon Carbide Power DevicesSilicon Carbide Power ElectronicsTransistors For Power Conversion
In this paper we present recent experimental results on SiC MOSFETs, IGBTs, and thyristors, and propose a consistent methodology for comparing unipolar and bipolar power devices as a function of blocking voltage and switching frequency.
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