Epitaxial Deposition of GaAs in the Ga (CH₃)₃AsH₃H₂‐System (IV) Thermodynamic and Kinetic Considerations

Abstract

Abstract For reactions taking place between the species Ga, As 2 , As 4 , AsH 3 , and H 2 , the equilibrium constants were calculated. The discussion indicates that factors other than thermodynamic considerations significantly influence the deposition process. Kinetic investigations demonstrate the importance of the As:Ga proportion that has to apply for perfect layer growth. The mechanism of deposition is in correspondence with a Langmuir‐Rideal Model. For high substrate temperatures a homogeneous reaction in the vapour phase can‐not be excluded.