Growth of Oxide Layers on Thin Aluminum Nitride Samples Measured by Electron Energy‐Loss Spectroscopy

Abstract

AlN ceramics with different amounts of oxygen impurities were investigated by electron energy‐loss Spectroscopy (EELS). Because of the high dynamics of EEL spectra, a method was developed to record partial spectra and then to join them together to form a complete spectrum. The data obtained from EEL spectra were the nitrogen/oxygen concentration ratio, sample thickness, and energy‐loss nearedge structures (ELNES). Because of spontaneous formation of an oxide layer on AlN samples immediately after ion milling, a method had to be developed which yielded the oxide layer thickness and the bulk oxygen content. The growth kinetics of the oxide layer were investigated by exposing the AIN samples at room temperature to air and to water for various times. From these measurements a logarithmic rate law for the oxidation of AlN at room temperature was obtained.