Ultralow threshold strained InGaAs-GaAs quantum well lasers by impurity-induced disordering

Abstract

Stripe-geometry strained InGaAs–GaAs quantum well lasers were fabricated by impurity induced disordering. Threshold currents as low as 2.2 mA at room temperature continuous operation (RT CW) were obtained for uncoated lasers having 1.2 μm wide, 215 μm long active stripes. The authors believe that this ultralow threshold is mainly due to the very small active stripe width and the excellent electrical confinement of the laser.