Electronics Letters · 1991 · 24 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsQuantum ConfinementQuantum WellsSemiconductor DefectsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsContinuous OperationLasersQuantum Well HeterostructuresQuantum Well LasersQuantum Well StructuresStrain EffectsStrained Quantum WellsThreshold Behavior
Stripe-geometry strained InGaAs–GaAs quantum well lasers were fabricated by impurity induced disordering. Threshold currents as low as 2.2 mA at room temperature continuous operation (RT CW) were obtained for uncoated lasers having 1.2 μm wide, 215 μm long active stripes. The authors believe that this ultralow threshold is mainly due to the very small active stripe width and the excellent electrical confinement of the laser.