Modeling and Applications of Ferroelectric-Thick Film Devices With Resistive Electrodes for Linearity Improvement and Tuning-Voltage Reduction

Abstract

Low-cost planar high-Q ferroelectric-thick film varactors (Qap90) are realized and component architectures using resistive electrodes for dc bias are investigated. A basic model for planar capacitors with resistive electrodes in the gap is developed and verified by finite-difference time-domain simulations and measurements of interdigital capacitors with high-resistivity indium-tin-oxide bias electrodes in the gap. An optimized high-Q capacitor design based on a series connection of ferroelectric varactors with resistive bias decoupling is presented. The approach allows the increase of device linearity and the reduction of tuning voltages. Based on this technology, a continuously tunable high-power impedance-matching network for 1.875 GHz with tuning voltages below 60 V was developed, realized, and characterized by small- and large-signal measurements with up to 33-dBm input power. The device requires no external dc-block or RF decoupling and features separated RF and dc contacts. The output IP <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> of up to 47.8 dBm verifies the excellent device linearity