Semiconductor-bonded III–V multijunction space solar cells

Abstract

Boeing-Spectrolab recently demonstrated monolithic 5-junction space solar cells using direct semiconductor-bonding technique. The direct-bonded 5-junction cells consist of (Al)GaInP, AlGa(In)As, Ga(In)As, GaInPAs, and GaIn(P)As subcells deposited on GaAs or Ge and InP substrates. Large-area, high-mechanical strength, and low-electrical resistance direct-bonded interface was achieved to support the high-efficiency solar cell structure. Preliminary 1-sun AM0 testing of the 5-junction cells showed encouraging results. One of the direct-bonded solar cell achieved an open-circuit-voltage of 4.7 V, a short-circuit current-density of 11.7 mA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , a fill factor of 0.79, and an efficiency of 31.7%. Spectral response measurement of the five-junction cell revealed excellent external quantum efficiency performance for each subcell and across the direct-bonded interface. Improvements in crystal growth and current density allocation among subcells can further raise the 1-sun, AM0 conversion efficiency of the direct-bonded 5-junction cell to 35 - 40%.