IEEE Transactions on Magnetics · 1977 · 27 citations · 8 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials ChemistrySurface ScienceCrystallographyDefects In Electronic MaterialsElectrical ConductivityEpitaxial GrowthSemiconductor Crystal GrowthElectrical ResistivityEpitaxial Film GrowthEpitaxial Growth KineticsFilm Growth MechanismsResistivityTemperature-dependent Resistivity
Enhanced T <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</inf> 's (>21°K), T <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</inf> widths and resistivity ratios result when controlled amounts of O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> are admitted during film growth. O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> levels ≈ 5 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-7</sup> mm Hg stabilize the Nb <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> Ge phase over a wide range of Nb/Ge flux ratios for films grown at 6A/sec and 1000°C.
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Bulletin of the American Physical Society
M. V. Salvetti, L. Margheri, Marcello Meldi et al. · HAL (Le Centre pour la Communication Scientifique Directe) · 2012 · 796 citations
Superconductivity in Nb–Ge films above 22 K
J. R. Gavaler · Applied Physics Letters · 1973 · 411 citations
Preparation and analysis of superconducting Nb-Ge films
L. R. Testardi, Ronald L. Meek, J. M. Poate et al. · Physical review. B, Solid state · 1975 · 156 citations