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Near-infrared electroluminescent devices based on colloidal HgTe quantum dot arrays
67
Citations
21
References
2005
Year
Optical MaterialsEngineeringColloidal NanocrystalsOptoelectronic DevicesChemistryCrystalline 4.6Luminescence PropertyPhotodetectorsOptical PropertiesQuantum DotsNear-infrared Electroluminescent DevicesMaterials SciencePhotoluminescenceNanotechnologyOptoelectronic MaterialsPhotonic MaterialsFunctional NanomaterialsElectronic MaterialsNanomaterialsApplied PhysicsQuantum Dot LayersGlass∕indium Tin OxideOptoelectronics
Crystalline 4.6 nm HgTe quantum dots, stabilized by 1-thioglycerol ligands, were synthesized by wet chemical methods. Room-temperature photoluminescence spectra of the dots, both in solution and as solid arrays, exhibited near-infrared emission. Light-emitting devices were fabricated by deposition of quantum dot layers onto glass∕indium tin oxide (ITO)∕3,4-polyethylene-dioxythiophene-polystyrene sulfonate (PEDOT) substrates followed by top contacting with evaporated aluminum. Room-temperature near-infrared electroluminescence from 1mm2 ITO∕PEDOT∕HgTe∕Al devices, centered at ∼1600nm, with an external quantum efficiency of 0.02% and brightness of 150nW∕mm2 at 50 mA and 2.5 V was achieved.
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