High-power 780 nm window diffusion stripe laser diodes fabricated by an open-tube two-step diffusion technique

Abstract

High-power and low-threshold-current GaAlAs lasers with a simple window structure fabricated by controllable open-tube two-step diffusion and single-step metalorganic chemical vapor deposition are discussed. The window structure and the waveguide with a narrow width around 2 mu m are formed by diffusion of zinc, which just passes through an n-type active layer. CW output power up to 134 mW without catastrophic damage and a threshold current of 17 mA have been achieved. A maximum output power density of 16 MW/cm/sup 2/ is estimated. A stable fundamental transverse mode of up to 100 mV in the wavelength range of 780 nm is obtained. Excellent uniformity of device characteristics is confirmed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>