A broadband 0.6 to 1 THz CMOS imaging detector with an integrated lens

Abstract

This paper presents a lens-integrated terahertz imaging detector implemented in a 65 nm bulk CMOS process technology. The back-side illumination through a silicon lens increases the imaging SNR by 7-15 dB. The broadband detector design has been verified from 0.6 to 1 THz. At 1 THz the circuit achieves a noise equivalent power (NEP) of 66 pW/√Hz and a responsivity (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</sub> ) of 800 V/W for back-side illumination. The first 1 THz CMOS active imaging results with a lens are presented.