IEEE Journal of Solid-State Circuits · 1997 · 69 citations · 5 references
EngineeringComputer EngineeringElectrical EngineeringLow-power DesignMicroelectronicsSemiconductor DevicesDigital Logic DesignHigh-frequency Semiconductor DevicesIntegrated Circuit DesignLow-power Digital Circuit DesignMicrowave Semiconductor DevicesResonant CircuitsLogic Gate ImplementationLogic GatesResonant TunnelingResonant Tunneling DevicesSchottky Barrier DiodesSchottky BarriersSchottky ContactsTunneling Diodes
We report on the successful demonstration of a functionally complete set of logic gates based on resonant interband tunneling diodes (RITDs) with a maximum operating frequency in excess of 12 GHz. At this high frequency of operation, the power dissipation is remarkably low-on the order of 0.5 mW per gate. The circuits for all gates, AND, OR, XOR, and INV, shared the same layout geometry, consisting of two Schottky diodes and three RITDs. Logical functionality was determined solely by varying the relative areas of the devices.
5
Resonant tunneling in semiconductor double barriers
L. L. Chang, L. Esaki, Raphael Tsu · Applied Physics Letters · 1974 · 1.9K citations
High speed semiconductor devices
III-Vs Review · 1991 · 533 citations
Engineering, Computer Engineering, Electrical Engineering +12