Publication | Closed Access

Characteristics of hafnium oxide grown on silicon by atomic-layer deposition using tetrakis(ethylmethylamino)hafnium and water vapor as precursors

Materials ScienceEngineeringOxide ElectronicsSurface ScienceApplied PhysicsAtomic-layer DepositionSemiconductor Device FabricationWater VaporChemical DepositionSilicon On InsulatorChemical Vapor Deposition