Publication | Closed Access
Electrical Conductivity and Lattice Defects in Nanocrystalline Cerium Oxide Thin Films
219
Citations
21
References
2001
Year
EngineeringOxygen Vacancy FormationElectrical ConductivityLattice DefectsThin Film Process TechnologyGrain SizeSemiconductorsThin Film ProcessingMaterials ScienceElectrical EngineeringCrystalline DefectsNanotechnologyOxide ElectronicsSemiconductor MaterialElectrical PropertyMaterial AnalysisNanomaterialsApplied PhysicsCoherence LengthThin Films
The results of the electrical conductivity and Raman scattering measurements of CeO 2 thin films obtained by a polymeric precursor spin‐coating technique are presented. The electrical conductivity has been studied as a function of temperature and oxygen activity and correlated with the grain size. When compared with microcrystalline samples, nanocrystalline materials show enhanced electronic conductivity. The transition from extrinsic to intrinsic type of conductivity has been observed as the grain size decreases to <100 nm, which appears to be related to a decrease in the enthalpy of oxygen vacancy formation in CeO 2 . Raman spectroscopy has been used to analyze the crystalline quality as a function of grain size. A direct comparison has been made between the defect concentration calculated from coherence length and nonstoichiometry determined from electrical measurements.
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