Lens-integrated THz imaging arrays in 65nm CMOS technologies

Abstract

THz CMOS imagers integrated with hyperhemispherical Si-lenses are presented and characterized. FPAs are implemented in 65nm CMOS bulk and SOI technologies. Lens-integrated detectors at 0.65 THz show an increase of 15dB and 20dB in SNR compared to front-side illumination for SOI and bulk respectively. The responsivities R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</sub> are increased and a minimum noise-equivalent power NEP of 17pW/√(Hz) is measured for SOI detectors with the lens. THz Images are presented.