Publication | Open Access
Spin relaxation in (110) and (001) InAs/GaSb superlattices
52
Citations
31
References
2003
Year
Electron Spin-relaxation TimeEngineeringSpin SystemsMagnetic ResonanceSpintronic MaterialSpin DynamicSpin PhenomenonQuantum MaterialsQuantum MatterSuperlattice InterfacesQuantum ScienceSpin-orbit EffectsPhysicsSolid-state PhysicQuantum MagnetismSpintronicsNatural SciencesApplied PhysicsCondensed Matter PhysicsNative Interface AsymmetrySpin Relaxation
We report an enhancement of the electron spin-relaxation time ${(T}_{1})$ in a (110) InAs/GaSb superlattice by more than an order of magnitude (25 times) relative to the corresponding (001) structure. The spin dynamics were measured using polarization sensitive pump probe techniques and a mid-infrared, subpicosecond periodically poled ${\mathrm{LiNbO}}_{3}$ optical parametric oscillator. Longer ${T}_{1}$ times in (110) superlattices are attributed to the suppression of the native interface asymmetry and bulk inversion asymmetry contributions to the precessional D'yakonov Perel spin-relaxation process. Calculations using a nonperturbative 14-band nanostructure model give good agreement with experiment and indicate that possible structural inversion asymmetry contributions to ${T}_{1}$ associated with compositional mixing at the superlattice interfaces may limit the observed spin lifetime in the (110) superlattice under study, suggesting the possibility for further improvements in ${T}_{1}$ through targeted growth techniques. Our findings have implications for spintronics applications using InAs/GaSb heterostructures.
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