2003 · 18 citations · 2 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave AmplifiersMicrowave Semiconductor DevicesSmall-signal AnalysisTransistor BiasingDistortion ReductionIntermodulation DistortionLinearity EnhancementLinearization Of Nonlinear DevicesPower Amplifier DesignPower Amplifier NonlinearityPredistortionPredistortion Linearization
Three different circuit topologies of predistortion linearizers are proposed using MESFETs biased at low drain bias. The design of a C-band linearizer using two 1- mu -gate-length devices is detailed, and the achieved results compare favorably with conventional designs which use Schottky diodes. The linearizer reduced by 10 dB the intermodulation products of a 10-W power amplifier operating at 6 GHz, and up to 4-dB back-off.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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