Forward- and reverse-biased electroluminescence behavior of chemically fabricated ZnO nanotubes/GaN interface

Abstract

Electroluminescence characteristics of an n-ZnO nanotubes/p-GaN heterostructure light-emitting diode (LED) have been investigated at forward and reverse bias. Distinctly different emission spectra have been observed and the location of the recombination of electron–hole is analyzed under both configurations. The forward-biased emission spectrum shows two peaks centered at around 450 and 560 nm, while the reverse-biased spectrum exhibits a single emission peak at 650 nm. By comparing the current transport mechanisms, it is suggested that the violet-blue emission peak (450 nm) observed only under forward bias is originating from the heterojunction of the ZnO nanotubes/p-GaN LED. The influence on the emission intensity of the device with the increase in temperature at constant current is studied in the range from 25 to 65 °C, to check its compatibility for practical applications and under harsh conditions.