Advanced 0.13um smart power technology from 7V to 70V

Abstract

This paper presents BCD process integrating 7V to 70V power devices on 0.13um CMOS platform for various power management applications. BJT, Zener diode and Schottky diode are available and non-volatile memory is embedded as well. LDMOS shows best-in-class specific Ron (R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SP</inf> ) vs. BV <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DSS</inf> characteristics (i.e., 70V NMOS has R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SP</inf> of 69mΩ-mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> with BV <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DSS</inf> of 89V). Modular process scheme is used for flexibility to various requirements of applications.