Enhanced Performance of Poly-Si Thin Film Transistors Using Fluorine Ions Implantation

Abstract

Fluorine (F)-implanted polycrystalline silicon thin-film transistor (poly-Si TFT) are proposed for the enhancement of device performance. A significant improvement in electrical characteristics, such as ratio, and field effect mobility, can be realized in the new thin-film transistor. The field effect mobility for F-implanted poly-Si TFTs is , and higher than in conventional SPC poly-Si TFTs. Furthermore, the F-implanted poly-Si TFT exhibits high immunity against hot carrier effect and improved electrical reliability. The manufacturing processes are simple and without additional thermal annealing steps, thereby compatible with the conventional TFT fabrication processes.