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High‐Density Arrays of Germanium Nanowire Photoresistors
68
Citations
24
References
2006
Year
SemiconductorsIndividual NanowiresPhotoelectric SensorPhotoluminescenceEngineeringPhysicsApplied PhysicsPhotoresistive PropertiesPhotoelectric MeasurementGermanium Nanowire PhotoresistorsOptoelectronicsCompound SemiconductorNanophotonicsSemiconductor Nanostructures
The photoresistive properties and dynamics of ordered high-density arrays of germanium nanowire photoresistors is presented. Individual nanowires demonstrate a sufficient photocurrent to be used in the detection of high illumination intensity. The figure illustrates the photoconductivity measurement assembly. Supporting information for this article is available on the WWW under http://www.wiley-vch.de/contents/jc_2089/2006/c0213_s.pdf or from the author. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
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