The epitaxial growth of CdxHg1−xTe from stoichiometric melts. Crystallization and diffusion

Abstract

Epitaxial layers of CdxHg1−xTe are grown from stoichiometric melts on CdTe and ZnTe substrates. Composition profiles of the layers are investigated. It is shown that the distribution of components through the thickness of the layer is defined by two processes: normal crystallization and component mutual diffusion. The dependence of the mutual diffusion coefficient on composition is revealed by the assumption that the layer growth rate is higher than the diffusion rate. For the composition x = 0.06 the liquidus and solidus temperatures are specified. [Russian Text Ignored].