Fabrication of Ultrathin Bi₂S₃ Nanosheets for High‐Performance, Flexible, Visible–NIR Photodetectors

Abstract

Ultrathin Bi2S3 nanosheets with thicknesses down to 2.2 nm are fabricated. The resultant ultrathin Bi2S3-based photoconductor shows high sensitivity to visible–near infrared light from 405 to 780 nm with a high external photoresponsivity up to 4.4 A W−1, high detectivity of ≈1011 Jones, relatively fast response time of ≈10 μs, and high flexibility and durability. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.