Thermal Stability Improvement of Vertical Conducting Green Resonant-Cavity Light-Emitting Diodes on Copper Substrates

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> Green light vertical-conducting resonant-cavity light-emitting diodes (RCLEDs) have been fabricated on a Cu substrate by the combination of laser lift-off and plating techniques. The structure of the RCLED/Cu is consisted of the InGaN–GaN multiple-quantum-well active layer between three layers of the dielectric TiO<emphasis><formula><tex>$_{2}$</tex></formula></emphasis>–SiO<emphasis><formula formulatype="inline"><tex>$_{2}$</tex></formula></emphasis> distributed Bragg reflector as a top mirror and an Al metal layer as a bottom mirror. It was found that the RCLED with Cu substrate presents superior thermal dissipation and a stable electroluminescence emission peak wavelength (<emphasis><formula formulatype="inline"><tex>$\sim$</tex></formula></emphasis>507 nm) under a high injection current. It is attributed to the Cu substrate providing a good heat sink and effectively reducing the junction temperature. </para>