IEEE Photonics Technology Letters · 2001 · 69 citations · 8 references
EngineeringElectrical EngineeringOptoelectronicsPhotonicsSemiconductor DevicesHigh-frequency Semiconductor DevicesOptical AmplifiersOptical ModulationOptoelectronic DevicesPhotonic Integrated CircuitsPolarization OpticsCross-polarizationExtinction RatioOptical Logic GatesPolarizationPolarization ModulationPolarization RotationPower OutputSemiconductor Optical Amplifiers
We demonstrate a new design for a XOR optical gate operating in the GHz regime using the cross-polarization modulation effect in a semiconductor optical amplifier. Dynamic and optically controlled polarization rotation in the devices is used to control the output power of the device. Static extinction ratio of the order of 20 dB can be obtained. Bit rate doubling at rate of 1.2 and 2.5 Gb/s have been demonstrated.
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20 Gb/s all-optical XOR with UNI gate
C. Bintjas, M. Kalyvas, G. Theophilopoulos et al. · IEEE Photonics Technology Letters · 2000 · 133 citations · Full text
Engineering, Computer Engineering, Electrical Engineering +17