Gigahertz-band high-gain GaAs monolithic amplifiers using parallel feedback technique

Abstract

A high-grain multistage amplifier design technique is described. As countermeasures against FET drawbacks, the drain conductance dispersion was modeled and the DC parallel feedback was applied against process variations. Based on these and further feedback techniques, a limiting amplifier and a gain-controllable amplifier for satellite communication systems were designed and fabricated utilizing an 0.8 mu m gate-length ion-implanted GaAs MESFET process. Moreover, their packages were developed considering stability conditions. A 45 dB 0.1-3.5 GHz limiting amplifier and a 22-38 dB 0.1-2.5 GHz gain-controllable amplifier were developed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>