Publication | Closed Access
Tuning the Exciton Binding Energies in Single Self-Assembled<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>InGaAs</mml:mi><mml:mo>/</mml:mo><mml:mi>GaAs</mml:mi></mml:math>Quantum Dots by Piezoelectric-Induced Biaxial Stress
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Citations
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References
2010
Year
External Biaxial StressEngineeringOptoelectronic DevicesExciton Binding EnergiesElectronic StructureSemiconductor NanostructuresSemiconductorsMath XmlnsQuantum ComputingNeutral ExcitonQuantum DotsQuantum MaterialsPiezoelectric ActuatorsQuantum EntanglementMaterials ScienceQuantum SciencePhotonicsPhysicsNanotechnologyQuantum DevicePiezoelectric-induced Biaxial StressSolid-state PhysicQuantum OpticElectronic MaterialsNatural SciencesApplied PhysicsCondensed Matter PhysicsQuantum Photonic DeviceOptoelectronics
We study the effect of an external biaxial stress on the light emission of single InGaAs/GaAs(001) quantum dots placed onto piezoelectric actuators. With increasing compression, the emission blueshifts and the binding energies of the positive trion (X+) and biexciton (XX) relative to the neutral exciton (X) show a monotonic increase. This phenomenon is mainly ascribed to changes in electron and hole localization and it provides a robust method to achieve color coincidence in the emission of X and XX, which is a prerequisite for the possible generation of entangled photon pairs via the recently proposed "time reordering" scheme.
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