3-D integration of MQW modulators over active submicron CMOS circuits: 375 Mb/s transimpedance receiver-transmitter circuit

Abstract

We accomplish the integration of GaAs-AlGaAs multiple quantum well modulators directly on top of active silicon CMOS circuits. This enables optoelectronic VLSI circuits to be achieved and also allows the design and optimization of the CMOS circuits to proceed independently of the placement and the bonding of surface-normal optical modulators to the circuit. Using this technique, we demonstrate operation of a 0.8 micron CMOS transimpedance receiver-transmitter circuit at 375 Mb/s.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>