Class E resonant low dv/dt rectifier

Abstract

A class-E resonant low dv/dt rectifier is analyzed and experimentally tested. All major parasitic reactive components are included in the rectifier topology. The diode capacitance and the leakage inductance of the isolation transformer and lead inductances are absorbed into the resonant inductance. Therefore, the rectifier is suitable for high-frequency applications such as resonant DC-to-DC converters. The rectifier is driven by a sinusoidal voltage source. Equations governing the circuit operation are derived using Fourier techniques. Experimental results are obtained at 1 MHz and an output voltage of 5 V. The design equations show good agreement with the measured circuit performance.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>