60 GHz high output power uni-travelling-carrierphotodiodes with integrated bias circuit

Abstract

A millimetre-wave high-output-power uni-travelling-carrier photodiode with a monolithically integrated bias circuit utilising a 1/4-wavelength coplanar waveguide is presented. The device exhibits a high saturated output power of +10 dBm with a bias voltage of –3 V, and –6 dBm without a bias voltage, both at 59.4 GHz.