A chemical reaction model for physical vapor deposition of compound semiconductor films

Abstract

Abstract A model for the physical vapor deposition of compound semiconductor films that describes film growth from component molecular beams is presented. Constitutive relationships are used in the model to account for incomplete adsorption from the incident molecular beams, emission of adsorbed components into vacuum, and surface reactions of the elemental species. The model predicts film composition and growth rate as a function of incident fluxes and substrate temperature. It is applicable for important binary and ternary alloy semiconductors including the II‐VI and III‐V compounds over the range of deposition conditions yielding both stoichiometric and two‐phase films. In this paper the model equations and the behavior predicted by the model are described for a number of material systems including (CdHg)Te, (CdZn)S, and CuInSe 2 .