High Power Photodiode Wafer Bonded to Si Using Au With Improved Responsivity and Output Power

Abstract

High power photodiodes wafer bonded to Si using a gold intermediate layer were demonstrated. A fabricated 20-mum-diameter photodiode exhibited a bandwidth of ~18 GHz, a large-signal saturation-current of ~50 mA, and a peak responsivity of ~1 A/W. Both the responsivity and the saturation current of the Au-bonded photodiode were improved compared to the photodiode with the same structure on InP substrate