Imaging of stresses in GaAs diode lasers using polarization-resolved photoluminescence

Abstract

Images of stress distributions in GaAs-based diode lasers have been obtained using scanned polarization-resolved photoluminescence. A stress resolution of about 10/sup 7 /dyn/cm/sup 2 /and a spatial resolution of about 1 mu m have been obtained. The experimental technique is described, and measured stress distributions due to ridge structures, metallization, applied force, and bonding are presented.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>