Very high K and high density TiTaO MIM capacitors for analog and RF applications

Abstract

For the first time, high density (10.3 fF//spl mu/m/sup 2/), low voltage linearity (/spl alpha/=89 ppm/V/sup 2/) and small leakage current (1.2/spl times/10/sup -82/ A/cm/sup 2/ or 5.8 fA/[pF/spl middot/V] at 2V) meet all the ITRS requirements of analog capacitor at year 2018. These are achieved by novel high-K TiTaO (K=45) and high work-function Ir capacitor, which further improve to very high 23 fF//spl mu/m/sup 2/ density and low 81 ppm/V/sup 2/ linearity for higher speed analog/RF ICs at 1GHz, using the fast /spl alpha/ decay mechanism with increasing frequency.