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Electron inelastic mean free paths in several solids for 200 eV ⩽ E ⩽ 10 keV
144
Citations
16
References
1982
Year
EngineeringElectron DiffractionElectronic StructureFree PathsElectron PhysicSemiconductorsElectron SpectroscopyQuantum MaterialsMaterials ScienceSio 2PhysicsAtomic PhysicsQuantum ChemistryEv ⩽ ESolid-state PhysicAb-initio MethodSeveral SolidsNatural SciencesApplied PhysicsCondensed Matter PhysicsEnergy Range 400
Abstract Values of k and p are given for predicting inelastic mean free paths for electrons with energies from 200 eV to 10 keV from the simple formula λ = kE p , based on theoretical calculations for ten elemental and compound solids. These results indicate that in the energy range 400 eV ⩽ E ⩽ 2000 eV, the value of p lies in the range 0.65–0.80. For Si and SiO 2 , presentation of the available experimental data and theoretical results illustrate the differences which exist in the values of electron mean free paths.
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