A +30.5 dBm CMOS Doherty power amplifier with reliability enhancement technique

Abstract

A watt-level, fully integrated 1:1 Doherty power amplifier for 2.4 GHz band is demonstrated in 65 nm CMOS. Both high peak output power of +30.5 dBm and high PAE of 23% at 6 dB power back-off are achieved by the proposed compact output network. A newly introduced reliability enhancement technique for sub-PA prolongs time to failure by up to 75% as well. The PA satisfies IEEE 802.11b and 11g spectrum masks at output power levels of 25.5 and 21.5 dBm respectively, from supply voltage of 3.3 V.