Publication | Closed Access
Ultrafast Electronic and Structural Response of Monolayer MoS<sub>2</sub> under Intense Photoexcitation Conditions
57
Citations
42
References
2014
Year
EngineeringIntense Photoexcitation ConditionsExcitation ConditionsSemiconductor NanostructuresIi-vi SemiconductorExtreme Excitation ConditionsUltrafast ElectronicOptical PropertiesQuantum MaterialsNanophotonicsMaterials SciencePhotoluminescencePhysicsQuantum ChemistryLayered MaterialStructural ResponseTransition Metal ChalcogenidesNatural SciencesSurface ScienceApplied PhysicsCondensed Matter PhysicsAbove-bandgap Photoexcitation
We report on the dynamical response of single layer transition metal dichalcogenide MoS2 to intense above-bandgap photoexcitation using the nonlinear-optical second order susceptibility as a direct probe of the electronic and structural dynamics. Excitation conditions corresponding to the order of one electron-hole pair per unit cell generate unexpected increases in the second harmonic from monolayer films, occurring on few picosecond time-scales. These large amplitude changes recover on tens of picosecond time-scales and are reversible at megahertz repetition rates with no photoinduced change in lattice symmetry observed despite the extreme excitation conditions.
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