Deposition of tin sulfide thin films from novel, volatile (fluoroalkythiolato)tin(iv) precursors

Abstract

Novel, volatile (fluoroalkylthiolato)tin(IV) precursors have been synthesised and (CF3CH2S)4Sn used to deposit tin sulfide films under APCVD (atmospheric pressure chemical vapour deposition) conditions. H2S is, however, required as co-reactant. Films deposited at 300–400 °C are composed of sulfur-deficient SnS2, films deposited at 450 and 500 °C comprise the sesquisulfide, Sn2S3, and the films deposited at 550 or 600 °C are sulfur-deficient SnS. The structure of [CF3(CF2)5CH2CH2S]4Sn is also reported.