Publication | Closed Access
A new large-signal model based on pulse measurement techniques for RF power MOSFET
23
Citations
7
References
2002
Year
Unknown Venue
Device ModelingElectrical EngineeringEngineeringRadio FrequencyHigh-frequency DeviceNew Large-signal ModelElectronic EngineeringLarge-signal ModelComputational ElectromagneticsPulse Measurement TechniquesPower ElectronicsExtraction TechniqueMicroelectronicsMicrowave EngineeringRf SubsystemRf Power MosfetPower Electronic DevicesElectromagnetic Compatibility
A large-signal model for RF power MOSFET has been obtained using a new characterization and extraction technique. This technique is based on pulsed I-V characteristics and pulsed S-parameters measurements, to take into account the thermal state of the device. A table-based model is used to represent the I-V drain current source. The complete large-signal model is implanted in an harmonic-balance commercial simulator and its accuracy is evidenced by a comparison with active load-pull measurements at L band.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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